The Koester NanoDevice Laboratory (KNDL) investigates new solid-state device concepts spanning multiple material platforms and applications. The lab works on advanced electronic devices, including scaled metal-oxide-semiconductor field effect transistors (MOSFETs) for end-of-roadmap ultra-large scale integration (ULSI) microchip applications, novel memory devices, high-speed transistors, diodes and varactors, optoelectronic devices, and ultra-wide bandgap semiconductors for high-power electronics.

Atomic lattice structure, glowing orange and yellow, with an overlay of blue and yellow spheres.

Two-dimensional (2D) material devices

KNDL develops high-performance transistors using 2D materials for applications in advance logic and memory circuits, as well as optoelectronic, spintronic and sensing devices.

A bonded wafer showing a test pattern on a dark surface with a gray square overlay.

Three-dimensional heterogeneous integration (3DHI)

KNDL investigates ways to use die and wafer bonding to integrate different semiconductor devices to create circuits with enhanced performance.

Image of SrSnO3 RF field effect transistor

Ultra-wide bandgap (UWBG) devices

KNDL explores material properties and device applications of emerging ultra-wide bandgap materials, with a focus on group-IV oxide materials.