Ultrawide Bandgap (UWBG) Devices

Ultra-wide bandgap (UWBG) semiconductors promise to extend the power-handling capability and efficiency of semiconductor devices beyond the limits of conventional wide-bandgap materials such as gallium nitride (GaN) and silicon carbide (SiC). KNDL is currently investigating an emerging UWBG material, rutile-germanium dioxide (GeO₂), which has theoretical advantages over other materials such as beta gallium oxide (β-Ga₂O₃) and aluminum gallium nitride (AlGaN). With collaborators at the University of Michigan, the lab has observed promising electrical results in GeO₂ alloyed with tin (Sn), including high breakdown field and low contact resistance. In prior work, in collaboration with the University of Minnesota, KNDL has demonstrated numerous first-ever achievements in stannate perovskite UWBG semiconductors, including operation of Sn-based perovskite transistors, the latter of which achieved gigahertz (GHz) operation.