Publications

Explore publications and conference contributions from Professor Steven Koester and collaborators across semiconductor devices, 2D materials, nanoelectronics, sensing, and related technologies.

2026

R. A. Dawley, A. Adhikari , K. S. Hoque, R. Li, L. G. Cooper, T. Ma, A. Kozhakhmetov, K. Maxey, S. J. Koester, and A. A. Bol, “Reducing plasma-induced damage in 2D transition metal dichalcogenide heterostructures through optimized plasma-enhanced atomic layer deposition,” ACS Appl. Mater. & Interfac. 18, 32882-32893 (2026).
U. Mansur, Y. Zheng, C.-H. Liao, J. T. Heron, and S. J. Koester, “Toward determination of the critical breakdown field in rutile Sn_1-xGe_xO₂ alloys,” Physica Status Solidi A 223, e202501029 (2026).
S. Narla, R. Li, P. Kumar, J. J. P. M. Schulpen, R. A. Dawley, A. A. Bol, A. Naeemi, and S. J. Koester, “Transition metal dichalcogenide thin-film resistors for content addressable memories with improved search resolution,” IEEE Elect. Dev. Lett. 47, 387-390 (2026).

2025

C.-H. Liao, S. Ghosh, R. Raj, J. Garcia-Barriocanal, K. A. Mkhoyan, and S. J. Koester, “Double-layer La:HfO₂ ferroelectric capacitors for multi-level memory applications,” IEEE J. Elect. Dev. Soc. 13, 1230-1236 (2025).
S. Lee, E. H. Lee, Y.-K. Kwon, S. J. Koester, P. Avouris, V. Cherkassky, J. Tersoff, and T. Low, “Generalized energy band alignment model for van der Waals heterostructures with a charge spillage dipole,” ACS Nano 19, 37749-37757 (2025).
B. Lukaskawcez, S. Varshney, S. Choo, S. H. Park, D. Seo, L. Thompson, N. Hirshberg, M. Garber, D. Uram, H. Binger, S. J. Koester, S.-H. Oh, T. Low, B. Jalan, and A. McLeod, “Interfacial strong coupling and negative dispersion of propagating polaritons in freestanding oxide membranes,” Adv. Opt. Mater. 13, e01452 (2025).
A. K. Manjeshwar, Z. Yang, C.-H. Liao, J. Wen, S. J. Koester, R. D. James, and B. Jalan, “Ferroelectric switching in hybrid molecular-beam-epitaxy-grown BaTiO₃ films,” Nano Lett. 25, 14246–14255 (2025).
R. Li, R. A. Dawley, S. Mishra, A. Adhikari, A. A. Bol, and S. J. Koester, “WS₂ p-MOSFETs with channels deposited by plasma-enhanced atomic-layer deposition,” Appl. Phys. Lett. 126, 253102 (2025).
D. Seo, S. Mishra, R. Li, J. Wen, S. G. Jeong, B. Lukaskawcez, S. Lee, T. Low, A. S. McLeod, B. Jalan, and S. J. Koester, “A strategic approach for enhanced p-type doping of WSe₂ p-MOSFETs using an atomic oxidation process,” Adv. Elec. Mater., 2025, accepted.
N. Izquierdo, R. Li, P. R. Christenson, S.-H. Oh, and S. J. Koester, “Dielectrophoresis-enhanced graphene field-effect transistors for nano-analyte sensing,” ACS Appl. Mater. & Interfac. 17, 32764-32772 (2025).
R. Li, J. J. P. M. Schulpen, R. Dawley, N. Hirshberg, M. Odlyzko, S. Lee, K. S. Hoque, T. Low, A. McLeod, A. A. Bol, and S. J. Koester, “Ultra-low-resistance contacts to heavily-doped p-type Nb_xW_1-xS_y thin films grown by atomic layer deposition,” ACS Appl. Mater. & Interfac. 17, 10931-10941 (2025).
Z. Qian, R. Wan, C.-H. Liao, S. Koester, and M. Seok, "Theoretical optimal specifications of memcapacitors for charge-based in-memory computing," Proc. 30^th Asia & South Pacific Design Automation Conf., Tokyo, Japan, Jan. 20-23, 2025.
K. S. Hoque, J. Wen, and S. J. Koester, “Atomic oxygen treatment for uniform high-k dielectric deposition on TMD monolayers,” Materials Research Society Spring Meeting, Seattle, WA, Apr. 7-11, 2025.

2024

L. Jin, J. Wen, O. Odlyzko, N. Seaton, R. Li, N. Haratipour, and S. J. Koester, and A. A. Bol, “High-performance WS₂ MOSFETs with bilayer WS₂ contacts,” ACS Omega 9, 32159-32166 (2024).
J. J. P. M. Schulpen, C. H. X. Lam, R. A. Dawley, R. Li, L. Jin, T. Ma, W. M. M. Kessels, and S. J. Koester, and A. A. Bol, “Nb doping and alloying of 2D WS₂ by atomic layer deposition for 2D transition metal dichalcogenide transistors and HER electrocatalysts,” ACS Appl. Nano Mater. 7, 7395-7407 (2024).
S. Varshney, S. Choo, L. Thompson, Z. Yang, J. Shah, J. Wen, S. J. Koester, K. A. Mkhoyan, A. McLeod, and B. Jalan, “Fast and facile synthesis route to epitaxial oxide membrane using a sacrificial layer,” ACS Nano 18, 6348-6358 (2024).
N. S. S. Capman, V. R. S. K. Chaganti, L. Simms, C. J. Hogan, Jr., and S. J. Koester, “Using machine learning to overcome interfering oxygen effects in a graphene volatile organic compound sensor,” ACS Appl. Mater. & Interfac. 16, 7554-7564 (2024).
S. J. Koester, “Why 2D (and why not)? A perspective on the potential and pitfalls of 2D material device research,” 82^nd Device Research Conference (DRC), College Park, MD, Jun. 24-26, 2024 (invited).
D. Seo, S. Mishra, R. Li, and S. J. Koester, “A strategic approach for enhanced p-doping of WSe₂ FETs through atomic oxidation process,” 82^nd Device Research Conference (DRC), College Park, MD, Jun. 24-26, 2024.
B. Bista, J. Wen, P. Golani, F. Liu; Tristan Truttmann; Bharat Jalan, S. Koester, and G. Pavlidis, “3D finite thermal modelling of SrSnO₃ field effect transistors,” 82^nd Device Research Conference (DRC), College Park, MD, Jun. 24-26, 2024.
P. Golani, F. Liu, J. Wen, S. J. Koester, T. K. Truttmann, A. K. Manjeshwar, and B. Jalan, “Field effect transistors based upon the emerging wide bandgap semiconductor: CaSnO₃,” Government Microcircuit Applications and Critical Technology (GOMACTech) Conference, Charlston, SC, Mar. 18-21, 2024.
S. Varshney, S. Choo, L. Thompson, J. Shah, Z. Yang, J. Wen, S. J. Koester, K. A. Mkhoyan, A. McLeod, and B. Jalan, “Fast route to synthesis of free-standing complex oxide membranes using a sacrificial layer method grown by hybrid MBE,” March Meeting of the American Physical Society, Minneapolis, MN, Mar. 4-8, 2024.
A. Rao, S. Varshney, P. Sundaram, A. Walton, S. Gathmann, J. Wen, S. J. Koester, C. D. Frisbie, and B. Jalan, “High-performance capacitors based on SrTiO₃ heterostructures for programmable catalysis,” March Meeting of the American Physical Society, Minneapolis, MN, Mar. 4-8, 2024.
D. Seo, S. Lee, N. Izquierdo, S. H. Park, E. H. Lee, R. Younas, G. Zhou, C. Hinkle, T. Low, and S. J. Koester, “Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting,” March Meeting of the American Physical Society, Minneapolis, MN, Mar. 4-8, 2024.
A. K. Manjeshwar, Z. Yang, A. Rao, G. Rojas, J. Wen, C.-H. Liao, S. J. Koester, R. James, and B. Jalan, “Robust polarization switching behavior in metal-organic MBE-grown metal-ferroelectric-metal heterostructures,” March Meeting of the American Physical Society, Minneapolis, MN, Mar. 4-8, 2024.

2023

F. Liu, P. Golani, T. K. Truttmann, I. Evangelista, M. A. Smeaton, D. Bugallo, J. Wen, A. K. Manjeshwar, S. J. May, L. F. Kourkoutis, A. Janotti, S. J. Koester, and B. Jalan, “Doping the undopable: Hybrid molecular beam epitaxy growth, n-type doping, and field-effect transistor Using CaSnO₃,” ACS Nano 17, 16912-16922 (2023).
S. Lee, D. Seo, S. H. Park, N. Izquierdo, E. H. Lee, R. Younas, G. Zhou, M. Palei, A. J. Hoffman, M. S. Jang, C. L. Hinkle, S. J. Koester, and T. Low, “Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting,” Nat. Commun. 14, 3889 (2023).
P. P. Sundaram, F. Liu, F. Alema, A. Osinsky, B. Jalan, and S. J. Koester, “Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD,” Appl. Phys. Lett. 122, 232105 (2023).
P. P. Sundaram, F. Liu, F. Alema, A. Osinsky, B. Jalan, and S. J. Koester, “Investigating the properties of β-Ga₂O₃ Schottky diodes on MOCVD-grown (001) drift layer,” The Gallium Oxide Workshop, Buffalo, NY, Aug. 14-18, 2023.
R. Li, J. J. P. M. Schulpen, A. Bol, and S. J. Koester, “Electrical characterization and contact resistance to ALD-deposited WNbS₂ thin films,” 65^th Electronic Materials Conference (EMC), Santa Barbara, CA, Jun. 28-30, 2023.
J. Wen and S. J. Koester, “High-performance WS₂ MOSFETs with Bi/Sb Composite Contacts,” 81^st Device Research Conference (DRC), Santa Barbara, CA, Jun. 26-28, 2023.
B. Bivek, P. Golani, F. Liu, T. K. Truttman, G. Pavlidis, A. Centrone, B. Jalan, and S. J. Koester, “Evaluating the thermal performance of perovskite SrSnO₃ field effect transistors,” 22^nd IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm2023), Orlando, FL, May 30-Jun. 2, 2023.
P. P. Sundaram, F. Liu, F. Alema, A. Osinsky, B. Jalan, and S. J. Koester, “Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD,” 2023 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), Orlando, FL, May 15-18, 2023.
F. Liu, T. Truttmann, P. Golani, J. Wen, M. Smeaton, L. Kourkoutis, S. Koester, and B. Jalan, “Adsorption-controlled growth and electronic transport properties of La-doped CaSnO₃ films,” March Meeting of the American Physical Society, Las Vegas, NV, Mar. 13-17, 2023.
S. J. Koester, “Contacts for 2D-material MOSFETs: Recent advances and outstanding challenges,” 7^th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023, Seoul, Republic of Korea, Mar. 7-10, 2023 (invited).

2022

H. Yoon, T. K. Truttmann, F. Liu, B. E. Matthews, S. Choo, Q. Su, V. Saraswat, S. Manzo, M. S. Arnold, M. E. Bowden, J. K. Kawasaki, S. J. Koester, S. R. Spurgeon, S. A. Chambers, and B. Jalan, “Free-standing epitaxial SrTiO₃ nanomembranes via remote epitaxy using hybrid molecular beam epitaxy,” Sci. Adv. 8, eadd5328 (2022).
N. S. S. Capman, X. V. Zhen, J. T. Nelson, V. R. S. K. Chaganti, R. C. Finc, M. J. Lyden, T. L. Williams, M. Freking, G. J. Sherwood, P. Bühlmann, C. J. Hogan, and S. J. Koester, “Machine learning-based rapid detection of volatile organic compounds in a graphene electronic nose,” ACS Nano 16, 19567-19583 (2022).
E. Harrington, S. Dhople, X. Wang, J. Choi, and S. Koester, “Sustainability for semiconductors,” Issues in Sci. & Technol. 39, Fall, 2022.
P. Golani, C. N. Saha, P. P. Sundaram, F. Liu, T. K. Truttmann, V. R. S. K. Chaganti, B. Jalan, U. Singisetti, and S. J. Koester, “Self-heating in ultra-wide bandgap n-type SrSnO₃ thin films,” Appl. Phys. Lett. 121, 162102 (2022).
Z. Cheng, C.-S. Pang, P. Wang, S. T. Le, Y. Wu, D. Shahrjerdi, I. Radu, M. C. Lemme, L.-M. Peng, X. Duan, Z. Chen, J. Appenzeller, S. J. Koester, E. Pop, A. D. Franklin, and C, A. Richter, “How to report and benchmark emerging field-effect transistors,” Nat. Electron. 5, 416 423 (2022).
L. Jin, and S. J. Koester, “Contact gating in dual-gated WS₂ MOSFETs with Semi-Metallic Bi Contacts,” IEEE Elect. Dev. Lett. 43, 1575-1578 (2022).
P. P. Sundaram, F. Alema, A. Osinsky, and S. J. Koester, “β-(Al_xGa_1-x)₂O₃/Ga₂O₃ heterostructure Schottky barrier diodes for improved V_BR²/R_ON,” J. Vac. Sci. & Technol. A 40, 043211 (2022).
J. Wen, V. R. S. K. Chaganti, and S. J. Koester, “Backgated graphene varactors with quality factor-frequency product above 300 GHz,” IEEE Elect. Dev. Lett. 43, 820-823 (2022).
L. Jin, and S. J. Koester, “High-performance dual-gated single-layer WS₂ MOSFETs with Bi contacts,” IEEE Elect. Dev. Lett. 43, 639-642 (2022).
S. Kundu, P. Golani, H. Yun, S. Guo, K. Youssef, S. J. Koester, and K. A. Mkhoyan, “Tunable metal contacts at layered black-arsenic/metal interface forming during metal deposition for device fabrication,” Commun. Materials 3, 11 (2022).
D. Seo, S. Lee, N. Izquierdo, S. H. Park, E. H. Lee, R. Younas, G. Zhou, C. Hinkle, T. Low, and S. J. Koester, “A path toward achieving perfect absorption in 2D heterostructures,” Materials Research Society Meeting, Boston, MA, Nov. 27-Dec. 2, 2022.
N. Izquierdo, R. Li, S.-H. Oh, and S. J. Koester, “Demanding more from graphene-based sensors: design and development of multi-functional GFET with dielectrophoresis enhanced sensing capabilities,” Materials Research Society Meeting, Boston, MA, Nov. 27-Dec. 2, 2022.
P. Golani, C. N. Saha, P. P. Sundaram, F. Liu, T. K. Truttmann, V. R. S. K. Chaganti, U. Singisetti, B. Jalan, and S. J. Koester, “Self-heating in ultra-wide bandgap n-Doped SrSnO₃ thin films,” Compound Semiconductor Week 2022, Ann Arbor, MI, Jun. 1-3, 2022.

2021

S.-H. Oh, H. Altug, X. Jin, T. Low, S. J. Koester, A. P. Ivanov, J. B. Edel, P. Avouris, and M. S. Strano, “Nanophotonic biosensors harnessing van der Waals materials,” Nat. Commun. 12, 3824 (2021).
N. Izquierdo, J. C. Myers, P. Golani, A. De Los Santos, N. C. A. Seaton, S. J. Koester, and S. A. Campbell, “Growth of black arsenic phosphorus thin films and its application for field-effect transistors,” Nanotechnol. 32, 325601 (2021).
V. R. S. K. Chaganti, P. Golani, T. Truttmann, F. Liu, B. Jalan, and S. J. Koester, “Optimizing Ohmic contacts to Nd-doped n-type SrSnO₃,” Appl. Phys. Lett. 118, 142104 (2021).
C. Kai, K. Agarwal, H. A. Bechtel, C. Liu, D. Joung, A. Nemilentsau, Q. Su, T. Low, S. J. Koester, and J.-H. Cho, “Hybridized radial and edge coupled 3D plasmon modes in self-assembled graphene nanocylinders,” Small 17, 2100079 (2021).
S. Namgung, S. J. Koester, and S.-H. Oh, “Ultraflat sub-10 nanometer gap electrodes for two-dimensional optoelectronic devices,” ACS Nano 15, 5276-5283 (2021).
J. Wen, V. R. S. K. Chaganti, T. K. Truttmann, F. Liu, B. Jalan, and S. J. Koester, “SrSnO₃ metal-semiconductor field-effect transistor with GHz operation,” IEEE Elect. Dev. Lett. 42, 74-77 (2021).
L. Jin, R. Ma, and S. J. Koester, “Transition metal dichalcogenide (TMDC) heterostructure field effect transistors (FETs) fabricated by sequential chemical vapor deposition (CVD),” 63^rd Electronic Materials Conference (EMC), Virtual, Jun. 23-25, 2021.
C. A. Richter, Z. Cheng, S. T. Le, S. J. Koester, E. Pop, and A. D. Franklin, “Reporting and benchmarking emerging field-effect transistors,” 63^rd Electronic Materials Conference (EMC), Virtual, Jun. 23-25, 2021.
J. Wen, V. R. S. K. Chaganti, and S. J. Koester, “Optimized graphene varactors with Q > 18 at 18 GHz,” 79^th Device Research Conference (DRC), Virtual, Jun. 20-23, 2021.

2020

Q. Su, X. V. Zhen, J. T. Nelson, R. Li, P. Bühlmann, G. Sherwood, and S. J. Koester, “Ultra-clean graphene transfer using a sacrificial fluoropolymer nanolayer: implications for sensor and electronic applications,” ACS Appl. Nano Mater. 3, 11998-12007 (2020).
Y. Yoo, J. S. Jeong, R. Ma, S. J. Koester and J. E. Johns, “Ultrathin one-dimensional molybdenum telluride quantum wires,” Chem. Mater. 32, 9650-9655 (2020).
R. Su, J. Wen, Q. Su, M. S. Wiederoder, S. J. Koester, J. R. Uzarski, and M. C. McAlpine, “3D printed self-supporting elastomeric structures for multifunctional microfluidics,” Sci. Adv. 6, eabc9846 (2020).
A. Chaves, J. G. Azadani, H. Alsalman, D. R. da Costa, R. Frisenda, A. J. Chaves, S. H. Song, Y. D. Kim, D. He, J. Zhou, A. Castellanos-Gomez, F. M. Peeters, Z. Liu, C. L. Hinkle, S.-H. Oh, P. D. Ye, S. J. Koester, Y. H. Lee, Ph. Avouris, X. Wang, and T. Low, “Bandgap engineering of two-dimensional semiconductor materials,” npj 2D Mater. 4, 29 (2020).
V. R. S. K. Chaganti, T. K. Truttmann, F. Liu, B. Jalan, and S. J. Koester, “SrSnO₃ field-effect transistors with recessed gate electrodes,” IEEE Elect. Dev. Lett. 41, 1428-1431 (2020).
P. Golani, H. Yun, S. Ghosh, J. Wen, K. A. Mkhoyan, and S. J. Koester, “Ambipolar transport in van der Waals black arsenic field effect transistors,” Nanotechnol. 31, 405203 (2020).
Y. Zhang, Q. Su, J. Zhu, S. Koirala, Steven J. Koester, and X. Wang, “Thickness-dependent thermal conductivity of mechanically exfoliated β-Ga₂O₃ thin films,” Appl. Phys. Lett. 116, 202101 (2020).
F. Z. Bidoky, B. Tang, R. Ma, K. S. Jochem, W. J. Hyun, D. Song, S. J. Koester, T. P. Lodge, and C. D. Frisbie, “Sub-3 V ZnO electrolyte-gated transistors and circuits with screen-printed and photo-crosslinked ion gel gate dielectrics: New routes to improved performance,” Adv. Func. Mater. 30, 1902028 (2020).
H. Yun, S. Ghosh, P. Golani, S. J. Koester, and K. A. Mkhoyan, “Layer-dependence of dielectric response and water-enhanced ambient degradation of highly-anisotropic black As,” ACS Nano 14, 5988-5997 (2020).
A. W. Stephan and S. J. Koester, “Spin-Hall MTJ devices for advanced neuromorphic functions,” IEEE Trans. Elect. Dev. 67, 487-492 (2020).
E. Yarmoghaddam, N. Haratipour, S. J. Koester, and S. Rakheja, “A physics-based compact model for ultra-thin black phosphorus FETs--Part II: model validation against numerical and experimental data,” IEEE Trans. Elect. Dev. 67, 397-405 (2020).
E. Yarmoghaddam, N. Haratipour, S. J. Koester, and S. Rakheja, “A physics-based compact model for ultra-thin black phosphorus FETs--Part I: effect of contacts, temperature, ambipolarity, and traps,” IEEE Trans. Elect. Dev. 67, 389-396 (2020).
V. R. S. K. Chaganti, T. Truttmann, B. Jalan, and S. J. Koester, “Ohmic contacts to MBE-grown n-type SrSnO₃ thin films,” 2020 Virtual Materials Research Society Fall Meeting, Nov. 28-Dec. 4, 2020.

2019

M. C. Robbins, P. Golani, and S. J. Koester, “Right-angle black phosphorus tunneling field effect transistor,” IEEE Elect. Dev. Lett. 40, 1988-1991 (2019).
R. J. Wu, S. Udyavara, R. Ma, Y. Wang, M. Chhowalla, T. Birol, S. J. Koester, M. Neurock, and K. A. Mkhoyan, “Visualizing the metal- contacts in two-dimensional field-effect transistors with atomic resolution,” Phys. Rev. Mater. 3, 111001 (2019).
J. Hu, G. Stecklein, D. A. Deen, Q. Su, P. A. Crowell, and S. J. Koester, “Scaling of the nonlocal spin and baseline resistances in graphene lateral spin valves,” IEEE Trans. Elect. Dev. 66, 5003-5010 (2019).
A. W. Stephan, Q. Lou, M. T. Niemier, X. S. Hu, and S. J. Koester, “Nonvolatile spintronic memory cells for neural networks,” IEEE J. Expl. Solid-State Comp. Dev. & Circ. 5, 67-73 (2019).
J. Hu, B. Li, C. Ma, D. Lilja, and S. J. Koester, “Spin-Hall-effect based stochastic number generator for parallel stochastic computing,” IEEE Trans. Elect. Dev. 66, 3620-3627 (2019).
R. Ma, H. Zhang, Y. Yoo, Z. P. Degregorio, L. Jin, P. Golani, J. G. Azadani, T. Low, J. E. Johns, L. A. Bendersky, A. V. Davydov, and S. J. Koester, “MoTe₂ lateral homojunction field-effect transistors fabricated using flux-controlled phase engineering,” ACS Nano 13, 8035-8046 (2019).
Q. Su and S. J. Koester, “Understanding sources of electrical disorder in graphene grown by chemical vapor deposition for wafer-scale device applications,” ACS Appl. Nano Mater. 2, 3426-3433 (2019).
A. W. Stephan, J. Hu, and S. J. Koester, “Performance estimate of inverse Rashba-Edelstein magnetoelectric devices for neuromorphic computing,” IEEE J. Expl. Solid-State Comp. Dev. & Circ. 5, 25-33 (2019).
E. Yarmoghaddam, N. Haratipour, S. J. Koester, and S. Rakheja, “A virtual-source emission-diffusion I-V model for ultra-thin black phosphorus field-effect transistors,” J. Appl. Phys. 125, 165706 (2019).
C. Liang, R. Ma, K. Li, Y. Su, H. Gong, K. L. Ryder, P. Wang, A. L. Sternberg, E. X. Zhang, M. L. Alles, R. A. Reed, S. J. Koester, D. M. Fleetwood, and R. D. Schrimpf, “Laser-induced single-event transients in black phosphorus MOSFETs,” IEEE Trans. Nucl. Sci. 66, 384-388 (2019).
J. Hu, D. A. Deen, and S. J. Koester, “AC small-signal model for magnetoresistive lateral spin valves,” IEEE Trans. Magn. 55, 1600108 (2019).
P. Golani, and S. Koester, “Electrical characterization of ambipolar 2D arsenic field effect transistors,” Materials Research Society Meeting, Boston, MA, Dec. 1-6, 2019.
V. R. S. K. Chaganti, Y. Zhang, and S. J. Koester, “Non-volatile capacitance tuning in graphene/(Hf,Zr)O₂/metal varactors,” 77^th Device Research Conference (DRC), Ann Arbor, MI, Jun. 23-26, 2019.
R. Ma, Y. Yoo, Z. P. DeGregorio, L. Jin, P. Golani, J. E. Johns, and S. J. Koester, “Electrical characterization of in-plane few-layer 2H-1T' MoTe₂ homojunction interfaces,” 61^st Electronic Materials Conference (EMC), Ann Arbor, MI, Jun. 26-28, 2019.
B. Li, J. Hu, M. H. Najafi, S. Koester, and D. Lilja, “Low cost hybrid spin-CMOS compressor for stochastic neural networks,” 29^th ACM Great Lakes Symposium on VLSI (GLSVLSI'19), Tysons Corner, VA, May 9-11, 2019.
Q. Su and S. J. Koester, “Study of the electrical disorder sources in transferred CVD graphene,” Materials Research Society Meeting, Phoenix, AZ, Apr. 22-26, 2019.

2018

W. Amamou, G. Stecklein, S. J. Koester, P. A. Crowell, and R. K. Kawakami, “Spin absorption by in situ deposited nanoscale magnets on graphene spin valves,” Phys. Rev. Appl. 10, 044050 (2018).
B. Xu, A. Magli, Y. Anugrah, S. J. Koester, R. Perlingeiro, and W. Shen, “Nanotopography-responsive myotube alignment and orientation as a sensitive phenotypic biomarker for Duchenne muscular dystrophy,” Biomaterials 183, 54-66, (2018).
V. R. S. K. Chaganti, A. Prakash, J. Yue, B. Jalan, and S. J. Koester, “Demonstration of a depletion-mode SrSnO₃ n-channel MESFET,” IEEE Elect. Dev. Lett. 39, 1381-1384 (2018).
N. Haratipour, Y. Liu, R. J. Wu, S. Namgung, P. P. Ruden, K. A. Mkhoyan, S.-H. Oh, and S. J. Koester, “Mobility anisotropy in black phosphorus MOSFETs with HfO₂ gate dielectrics,” IEEE Trans. Elect. Dev. 65, 4093-4101, (2018).
J. Yue, A. Prakash, M. C. Robbins, S. J. Koester, and B. Jalan, “Depletion mode MOSFET using La-doped BaSnO₃ as a channel material,” ACS Appl. Mater. Interfaces 10, 21061 21065 (2018).
X. V. Zhen, E. G. Swanson, J. T. Nelson, Y. Zhang, Q. Su, S. J. Koester, and P. Bühlmann, “Non-covalent monolayer modification of graphene using pyrene and cyclodextrin receptors for chemical sensing,” ACS Appl. Nano Mater. 1, 2718 2726 (2018).
C. D. Liang, R. Ma, Y. Su, A. O Hara, E. X. Zhang, M. L. Alles, P. Wang, S. E. Zhao, S. T. Pantelides, S. J. Koester, R. D. Schrimpf, and D. M. Fleetwood, “Defects and low-frequency noise in irradiated black phosphorus MOSFETs with HfO₂ gate dielectrics,” IEEE Trans. Nucl. Sci. 65, 1227-1238 (2018).
J. Hu, G. Stecklein, Y. Anugrah, P. A. Crowell, and S. J. Koester, “Using programmable graphene channels as weights in spin-diffusive neuromorphic computing,” IEEE J. Expl. Solid-State Comp. Dev. & Circ. 4, 26-34 (2018).
S. Namgung, D. A. Mohr, D. Yoo, P. Bharadwaj, S. J. Koester, and S.-H. Oh, “Ultrasmall plasmonic single nanoparticle light source driven by a graphene tunnel junction,” ACS Nano 12, 2780–2788 (2018).
Y. Anugrah, J. Hu, G. Stecklein, P. A. Crowell, and S. J. Koester, “Independent gate control of injected and detected spin currents in CVD graphene nonlocal spin valves,” AIP Advances 8, 015129 (2018).
S. J. Koester, “2D materials for a new generation of multi-functional devices,” Graphene Week 2018, San Sebastian, Spain, Sep. 10-14, 2018 (invited).
J. Hu, D. A. Deen, and S. J. Koester, “Non-local lateral spin valve enabled alternate memory architectures,” 29^th Magnetic Recording Conference (TMRC), Milpitas, CA, Aug. 8-10, 2018 (invited).
C. D. Liang, R. Ma, Y. Su, E. X. Zhang, A. L. Sternberg, P. Wang, K. H. Ryder, M. L. Alles, S. J. Koester, D. M. Fleetwood, R. A. Reed, and R. D. Schrimpf, “Laser-induced single event transients in black phosphorus MOSFETs,” 2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2018), Kona, HI, Jul. 16-20, 2018.
S. J. Koester, “2D materials for nanoelectronic, nanosensing and nanospintronic applications,” European Materials Research Society 2018 Spring Meeting (E-MRS), Strasbourg, France, Jun. 18-22, 2018 (invited).
J. Zhu, S. Koirala, X. Wu, Y. Zhang, S. J. Koester, and X. Wang, “Analysis of thermal conductivity in bulk and thin-film β-Ga₂O₃ using time-domain thermoreflectance (TDTR),” Compound Semiconductor Week 2018 (CSW 2018), Cambridge, MA, May 29-Jun. 1, 2018.
H. A. Alsalman, J. G. Azadani, R. Grassi, S. J. Koester, and T. Low, “Electronic structure of two-dimensional group-IV chalcogenide vertical heterostructures,” Compound Semiconductor Week 2018 (CSW 2018), Cambridge, MA, May 29-Jun. 1, 2018.
A. Stephan, J. Hu, and S. J. Koester, “Inverse Rashba-Edelstein magnetoelectric devices for neuromorphic computing,” Compound Semiconductor Week 2018 (CSW 2018), Cambridge, MA, May 29-Jun. 1, 2018.
Q. Su, Y. Zhang, X. V. Zhen, P. Bühlmann, and S. J. Koester, “Quantifying disorder in CVD graphene induced by ripples from thermal expansion mismatch,” Materials Research Society Meeting, Phoenix, AZ, Apr. 2-6, 2018.
R. J. Wu, S. Udyavara, R. Ma, S. J. Koester, M. Neurock, and K. Andre Mkhoyan, “Direct observation of 2D material interfacial states within devices using STEM-EELS,” Materials Research Society Meeting, Phoenix, AZ, Apr. 2-6, 2018.
S. Koirala, S. Namgung, M. Atalla, M. C. Robbins, R. Ma, and S. J. Koester, “Anisotropic material properties of thin layered β-Ga₂O₃,” Materials Research Society Meeting, Phoenix, AZ, Apr. 2-6, 2018.
G. Stecklein, J. Hu, Q. Su, S. J. Koester, and P. A. Crowell, “Measurements of pure spin current using highly conductive graphene/Co and graphene/Al/Co interfaces,” March Meeting of the American Physical Society, Los Angeles, CA, Mar. 5-9, 2018.
R. J. Wu, S. Udyavara, R. Ma, S. J. Koester, M. Neurock, and K. A. Mkhoyan, “Direct observation of 2D material interfacial states within devices using STEM-EELS,” March Meeting of the American Physical Society, Los Angeles, CA, Mar. 5-9, 2018.
X. V. Zhen, E. G. Swanson, Y. Zhang, J. Nelson, S. J. Koester, and P. Bühlmann, “Non-covalent surface modification of graphene using pyrene and cyclodextrin derivatives,” Pittcon 2018 Conference & Expo, Orlando, FL, Feb. 26 - Mar. 1, 2018.
Y. Zhang, X. V. Zhen, R. Ma, P. Bühlmann, and S. J. Koester, “Development of graphene-based capacitive sensors for early diagnosis,” Pittcon 2018 Conference & Expo, Orlando, FL, Feb. 26 - Mar. 1, 2018.

2017

A. Barik, Y. Zhang, R. Grassi, B. P. Nadappuram, J. B. Edel, T. Low, S. J. Koester, and S.-H. Oh, “Graphene-edge dielectrophoretic tweezers for trapping of biomolecules,” Nat. Commun. 8, 1867 (2017).
R. Grassi, Y. Wu, S. J. Koester, and T. Low, “Semianalytical model of the contact resistance in two-dimensional semiconductors,” Phys. Rev. B 96, 165439 (2017).
Y. Zhang, R. Ma, X. Zhen, Y. C. Kudva, P. Bühlmann, and S. J. Koester, “Capacitive sensing of glucose in electrolytes using graphene quantum capacitance varactors,” ACS Appl. Mater. Interfaces 9, 38863 38869 (2017).
B. Deng, V. Tran, H. Jiang, C. Li, Y. Xie, Q. Guo, X. Wang, H. Tian, S. J. Koester, H. Wang, J. Cha, Q. Xia, L. Yang, and F. Xia, “Efficient electrical control of thin-film black phosphorus bandgap,” Nat. Commun. 8, 14474 (2017).
M. C. Robbins, S. Namgung, S.-H. Oh, and S. J. Koester, “Cyclical thinning of black phosphorus with high spatial resolution for heterostructure devices,” ACS Appl. Mater. Interfaces 9, 12654-12662 (2017).
N. Haratipour, S. Namgung, R. Grassi, T. Low, S.-H. Oh, and S. J. Koester, “High-performance black phosphorus MOSFETs using crystal orientation control and contact engineering,” IEEE Elect. Dev. Lett. 38, 685-688 (2017).
Y. Yoo, Z. P. Degregorio, Y. Su, S. J. Koester, J. E. Johns, “In-plane 2H-1T' MoTe₂ homojunctions synthesized by flux-controlled phase engineering,” Adv. Mater. 29, 1605461 (2017).
D. Joung, A. Nemilentsau, K. Agarwal, C. Dai, C. Liu, Q. Su, J. Li, T. Low, S. J. Koester, and J.-H. Cho, “Self-assembled three-dimensional graphene-based polyhedrons inducing volumetric light confinement,” Nano Lett. 17, 1987-1994 (2017).
M. C. Robbins and S. J. Koester, “Black phosphorus p- and n-MOSFETs with electrostatically doped contacts,” IEEE Elect. Dev. Lett. 38, 285-288 (2017).
C. Liang, Y. Su, E. X. Zhang, K. Ni, M. L. Alles, R. D. Schrimpf, D. M. Fleetwood, and S. J. Koester, “Total ionizing dose effects on passivated black phosphorus transistors,” IEEE Trans. Nucl. Sci. 64, 170-175 (2017).
Y. Li, V. R. S. K. Chaganti, M. A. Reynolds, B. J. Gerbi, and S. J. Koester, “Demonstration of a passive wireless radiation detector using fully-depleted silicon-on-insulator varactors,” IEEE Trans. Nucl. Sci. 64, 544-549 (2017).
M. C. Robbins, and S. J. Koester, “Crystal-oriented black phosphorus TFETs with strong band-to-band-tunneling anisotropy and subthreshold slope nearing the thermionic limit,” International Electron Devices Meeting (IEDM), San Francisco, CA, Dec. 3-6, 2017.
C. D. Liang, R. Ma, Y. Su, E. X. Zhang, M. L. Alles, P. Wang, S. M. Zhao, S. J. Koester, D. M. Fleetwood, and R. D. Schrimpf, “Radiation-induced charge trapping in black phosphorus MOSFETs with HfO₂ gate dielectrics,” 2017 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2017), New Orleans, LA, Jul. 17-21, 2017.
S. J. Koester, “Sensor applications of graphene quantum capacitance varactors,” Diamond and Carbon Materials, Chicago, IL, Jul. 17-18, 2017 (invited).
M. C. Robbins, N. Haratipour, and S. J. Koester, “Band-to-band tunneling limited ambipolar current in black phosphorus MOSFETs,” 75^th Device Research Conference (DRC), Notre Dame, IN, Jun. 25-28, 2017.
M. R. M. Atalla and S. J. Koester, “Black phosphorus avalanche photodetector,” 75^th Device Research Conference (DRC), Notre Dame, IN, Jun. 25-28, 2017.
J.-P. Wang, S. S. Sapatnekar, C. H. Kim, P. Crowell, S. Koester, S. Datta, K. Roy, A. Raghunathan, X. S. Hu, M. Niemier, A. Naeemi, C.-L. Chien, C. Ross, and R. Kawakami, “A pathway to enable exponential scaling for the beyond-CMOS era,” Proc. of the 54^th Design Automation Conference (DAC '17), Austin, TX, Jun. 18-22, 2017.
S. J. Koester, “Two-dimensional materials: from properties to applications,” Materials Research Society Meeting, Phoenix, AZ, Apr. 17-21, 2017 (invited).
M. A. Ebrish and S. J. Koester, “Understanding graphene’s interface with different dielectrics in graphene devices,” Materials Research Society Meeting, Phoenix, AZ, Apr. 17-21, 2017.

2016

S. Namgung, J. Shaver, S.-H. Oh, and S. J. Koester, “Multimodal photodiode and phototransistor device based on two-dimensional materials,” ACS Nano 10, 10500–10506 (2016).
G. Stecklein, P. A. Crowell, J. Li, Y. Anugrah, Q. Su, and S. J. Koester, “Contact-induced spin relaxation in graphene nonlocal spin valves,” Phys. Rev. Appl. 6, 054015 (2016).
C. U. Kshirsagar, W. Xu, Y. Su, M. C. Robbins, C. H. Kim, and S. J. Koester, “Dynamic memory cells using MoS₂ field-effect transistors demonstrating femtoampere leakage currents,” ACS Nano 10, 8457 8464 (2016).
V. O. Özçelik, J. G. Azadani, C, Yang, S. J. Koester, and T. Low, “Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching,” Phys. Rev. B 94, 035125 (2016).
N. Haratipour, S. Namgung, S.-H. Oh, and S. J. Koester, “Fundamental limits on the subthreshold slope in Schottky source/drain black phosphorus field-effect transistors,” ACS Nano 10, 3791-3800 (2016).
Y. Su, C. U. Kshirsagar, M. C. Robbins, N. Haratipour, and S. J. Koester, “Symmetric complementary logic inverter using integrated black phosphorus and MoS₂ transistors,” 2D Mater. 3, 011006 (2016).
N. Haratipour, and S. J. Koester, “Ambipolar black phosphorus MOSFETs with record n-channel transconductance,” IEEE Elect. Dev. Lett. 37, 103-106 (2016).
R. Ma, Q. Su, J. Li, and S. J. Koester, “Acetone sensing using graphene quantum capacitance varactors," 2016 IEEE Sensors Conference, Orlando, FL, Oct. 30 - Nov. 2, 2016.
Y. Zhang, R. Ma, Y. C. Kudva, P. Bühlmann, and S. J. Koester, “Glucose sensing with graphene varactors," 2016 IEEE Sensors Conference, Orlando, FL, Oct. 30 - Nov. 2, 2016.
Y.-L. Li, B. J. Gerbi, M. A. Reynolds, and S. J. Koester, “Demonstration of a passive wireless radiation detector using fully-depleted silicon-on-insulator varactors," 2016 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2016), Portland, OR, Jul. 11-15, 2016.
C. D. Liang, Y. Su, E. X. Zhang, M. L. Alles, R. D. Schrimpf, D. M. Fleetwood and S. J. Koester, “Total ionizing dose effects on passivated black phosphorus transistors,” 2016 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2016), Portland, OR, Jul. 11-15, 2016.
S. J. Koester, “Two-dimensional materials for electronic, photonic, spintronic and sensing applications,” 74^th Device Research Conference (DRC), Newark, DE, Jun. 19-22, 2016 (invited).
N. Haratipour and S. J. Koester, “Quantifying the impact of thickness and drain bias on black phosphorus field effect transistor performance,” 2016 IEEE Silicon Nanoelectronics Workshop, Honolulu, HI, Jul. 12-13, 2016.
S. Namgung, J. Shaver, S.-H. Oh, and S. J. Koester, “Large collection area Schottky photodetectors based on two-dimensional materials,” Exploring and Utilizing Electronic Properties of 2D Systems, Gordon Research Conference, South Hadley, MA, Jun. 5-10, 2016.
G. Stecklein, Y. Anugrah, J. Li, S. J. Koester, and P. Crowell, “Role of contact resistance on the effective spin relaxation rate in graphene,” American Physical Society Meeting, Baltimore, MD, Mar. 14-18, 2016.
S. J. Koester, “A novel wireless biosensing platform enabled by graphene varactors,” Pittcon Conference & Expo, Atlanta, GA, Mar. 6-10, 2016 (invited).

2015

Y.-L. Li, W. Porter, R. Ma, M. A. Reynolds, B. J. Gerbi, and S. J. Koester, “Capacitance-based dosimetry of Co-60 radiation using fully-depleted silicon-on-insulator devices,” IEEE Trans. Nucl. Sci. 62, 3012-3019 (2015).
E. J. Olson, R. Ma, T. Sun, M. A. Ebrish, N. Haratipour, K. Min, N. R. Aluru, and S. J. Koester, “Capacitive sensing of intercalated H₂O molecules using graphene,” ACS Appl. Mater. Interfaces 7, 25804-25812 (2015).
R. J. Wu, M. Topsakal, T. Low, M. C. Robbins, N. Haratipour, J. S. Jeong, R. M. Wentzcovitch, S. J. Koester, and K. A. Mkhoyan, “Atomic and electronic structure of exfoliated black phosphorus,” J. Vac. Sci. Technol. A. 33, 060604 (2015).
N. Haratipour, M. C. Robbins, and S. J. Koester, “Black phosphorus p-MOSFETs with 7-nm HfO₂ gate dielectric and low contact resistance,” IEEE Elect. Dev. Lett. 36, 411-413 (2015).
Y. Anugrah, M. C. Robbins, P. A. Crowell and S. J. Koester, “Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene,” Appl. Phys. Lett. 106, 103108 (2015).
A. Szabo, S. J. Koester, and M. Luisier, “Ab-initio simulation of van der Waals MoTe₂-SnS₂ heterojunction TFETs for low power electronics,” IEEE Elect. Dev. Lett. 36, 514-516 (2015).
N. Youngblood, C. Chen, S. J. Koester, and M. Li, “Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current,” Nat. Photonics 9, 247–252 (2015).
J. Hu, N. Haratipour, and S. J. Koester, “The effect of output-input isolation on the scaling and energy consumption of all-spin logic devices,” J. Appl. Phys. 117, 17B524 (2015).
J. Kim, A. Paul, P. A. Crowell, S. J. Koester, S. S. Sapatnekar, J.-P. Wang, and C. H. Kim, “Spin based computing: device concepts, current status, and a case study on a high performance microprocessor,” Proc. IEEE 103, 106-130 (2015).
M. C. Robbins, J. Outlaw, and S. J. Koester, “Controlled thinning of exfoliated black phosphorus using cycled H2O surface adsorption and desorption,” Materials Research Society Meeting, Boston, MA, Nov. 29-Dec. 4, 2015.
N. Wendel, R. Wu, N. Haratipour, M. C. Robbins, K. A. Mkhoyan, S. J. Koester, and S. A. Campbell, “Black phosphorus synthesis and characterization enabling high performance phosphorene transistors,” Materials Research Society Meeting, Boston, MA, Nov. 29-Dec. 4, 2015.
S. J. Koester, “Graphene varactors: a novel wireless biosensing platform,” IEEE-Nanomed 2015, Honolulu, HI, Nov. 15-18, 2015 (invited).
R. J. Wu, M. Topsakal, M. C. Robbins, N. Haratipour, J. S. Jeong, R. M. Wentzcovitch, S. J. Koester, and K. A. Mkhoyan, “Measuring the atomic and electronic structure of black phosphorus with STEM,” Microscopy & Microanalysis, Portland, OR, Aug. 2-6, 2015.
S. J. Koester, “Capacitance-based molecular sensing using graphene varactors," Nano-Mechanical Interfaces, Gordon Research Conference, Theory, Computations and Experiments, Hong Kong, Jul. 19-24, 2015 (invited).
Y.-L. Li, W. Porter, R. Ma, B. J. Gerbi, M. A. Reynolds, and S. J. Koester, “Capacitive-based dosimetry of Co-60 radiation using fully-depleted silicon-on-insulator devices," 2015 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2015), Boston, MA, Jul. 13-17, 2015.
Y. Su, N. Haratipour, M. C. Robbins, C. Kshirsagar, and S. J. Koester, “Integrated MoS₂ n-MOSFETs and black phosphorus p-MOSFETs with HfO₂ dielectrics and local backgate electrodes,” 73^rd Device Research Conference (DRC), Columbus, OH, Jun. 21-25, 2015.
N. Haratipour, M. C. Robbins, and S. J. Koester, “Black phosphorus n-MOSFETs with record transconductance,” 73^rd Device Research Conference (DRC), Columbus, OH, Jun. 21-25, 2015.
S. J. Koester, “2D materials: a platform technology for integrated optoelectronics”, European Materials Research Society 2015 Spring Meeting (E-MRS), Lille, France, May 11-15, 2015 (invited).
S. J. Koester, “2D materials for high-performance electronic, photonic and sensing applications,” Micro- and Nanotechnology Sensors, Systems, and Applications Conference at SPIE DSS 2015, Baltimore, MD, Apr. 20-24, 2015 (invited).
D. Joung, J. Li, S. J. Koester, and J.-H. Cho, “Building three-dimensional microscale graphene-based structures,” Materials Research Society Meeting, San Francisco, CA, Apr. 6-10, 2015.
D. Joung, J. Li, S. J. Koester, and J.-H. Cho, “Building freestanding 3D micro devices,” Materials Research Society Meeting, San Francisco, CA, Apr. 6-10, 2015.

2014

Y. Li, W. M. Porter, C. Kshirsagar, I. Roth, Y. Su, M. A. Reynolds, B. J. Gerbi, and S. J. Koester, “Fully-depleted silicon-on-insulator devices for radiation dosimetry in cancer therapy,” IEEE Trans. Nucl. Sci. 61, 3443-3450 (2014).
M. A. Ebrish, E. J. Olson, and S. J. Koester, “The effect of non-covalent basal plane functionalization on the quantum capacitance in graphene,” ACS Appl. Mater. Interfaces 6, 10296-10303 (2014).
N. Youngblood, Y. Anugrah, R. Ma, S. J. Koester, and M. Li, “Multifunctional graphene optical modulator and photodetector integrated on silicon waveguides,” Nano Lett. 14, 2741-2746 (2014).
D. A. Deen, E. J Olson, M. A. Ebrish, and S. J. Koester, “Graphene-based quantum capacitance wireless vapor sensors,” IEEE Sensors Journ. 14, 1459-1466 (2014).
S. J. Koester and M. Li, “Waveguide-coupled graphene optoelectronics,” IEEE J. Sel. Top. Quant. Electron. 20, 6000211 (2014) (invited).
E. J. Olson, Y. Zhang, M. A. Ebrish, R. Ma, N. Haratipour, A. Basu, Y. C. Kudva, and S. J. Koester, “Toward graphene-based wireless glucose sensors,” Materials Research Society Meeting, Boston, MA, Dec. 1-4, 2014.
J. Hu, N. Haratipour, and S. J. Koester, “Design strategies to optimize non-reciprocity in all-spin logic (ASL) devices,” 59^th Annual Magnetism and Magnetic Materials (MMM) Conference, Honolulu, HI, Nov. 3-7, 2014.
Y.-L. Li, W. Porter, I. Roth, C. Kshirsagar, Y. Su, B. J. Gerbi, and S. J. Koester, “Fully-depleted silicon-on-insulator devices for use as radiation dosimetry in cancer therapy,” 2014 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2014), Paris, France, Jul. 14-18, 2014.
N. Haratipour, and S. J. Koester, “Multi-layer MoTe₂ p-channel MOSFETs with high drive current,” 72^nd Device Research Conference (DRC), Santa Barbara, CA, Jun. 22-25, 2014.
C. Kshirsagar, W. Xu, C. H. Kim, and S. J. Koester, “Design and analysis of MoS₂-based MOSFETs for ultra-low-leakage dynamic memory applications,” 72^nd Device Research Conference (DRC), Santa Barbara, CA, Jun. 22-25, 2014.
A. Szabo, S. J. Koester, and M. Luisier, “Metal-dichalcogenide hetero-TFETs: are they a viable option for low power electronics?” 72^nd Device Research Conference (DRC), Santa Barbara, CA, Jun. 22-25, 2014.
M. A. Ebrish, and S. J. Koester, “All-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate,” 72^nd Device Research Conference (DRC), Santa Barbara, CA, Jun. 22-25, 2014.
N. Youngblood, Y. Anugrah, R. Ma, S. Koester, and M. Li, “Simultaneous optical modulation and detection using graphene integrated on a silicon waveguide,” CLEO: Science and Innovations, San Jose, CA, Jun. 8-13, 2014.
S. J. Koester, M. A. Ebrish, E. J. Olson, and D. A. Deen, “Understanding the electrical properties of graphene using the quantum capacitance effect,” Materials Research Society Meeting, San Francisco, CA, Apr. 21-25, 2014 (invited).
Y. Su, M. A. Ebrish, E. J. Olson, and S. J. Koester, “Physical and electrical characterization of exfoliated SnSe₂ thin films,” Materials Research Society Meeting, San Francisco, CA, Apr. 21-25, 2014.
S. J. Koester, “2D materials for optoelectronic applications,” International Conference on Ultimate Integration on Silicon (ULIS2014), Stockholm, Sweden, Apr. 7-9, 2014 (invited).
A. Paul, C. Kshirsagar, S. S. Sapatnekar, S. Koester, and C. H. Kim, “Leakage modeling for devices with steep sub-threshold slope considering random threshold variations,” 2014 27^th International Conference on VLSI Design, Mumbai, India, Jan. 5-9, 2014.

2013

Y. Su, M. A. Ebrish, E. J. Olson, and S. J. Koester, “SnSe₂ field-effect transistors with high drive current,” Appl. Phys. Lett. 103, 263104 (2013).
D. A. Deen, J. G. Champlain, and S. J. Koester, “Multilayer HfO₂/TiO₂ gate dielectric engineering of graphene field effect transistors,” Appl. Phys. Lett. 103, 073504 (2013).
Y. Lee, D. Kim, J. Cai, I. Lauer, L. Chang, S. J. Koester, D. Blaauw, and D. Sylvester, “Low-power circuit analysis and design based on heterojunction tunneling transistors (HETTs),” IEEE Trans. VLSI Sys. 21, 1632-1643 (2013).
M. A. Ebrish, E. J. Olson, and S. J. Koester, “Understanding the effect of glucose oxidase surface functionalization on the material and electronic properties of graphene,” 55^th Electronic Materials Conference (EMC), Notre Dame, IN, Jun. 26-28, 2013.
N. Harati Pour, Y. Anugrah, S. Wu, X. Xu, and S. J. Koester, “Chemical doping for threshold control and contact resistance reduction in graphene and MoS₂ field effect transistors,” 71^st Device Research Conference (DRC), Notre Dame, IN, Jun. 23-26, 2013.
M. A. Ebrish, D. A. Deen, and S. J. Koester, “Border trap characterization in metal-oxide-graphene capacitors with HfO₂ dielectrics,” 71^st Device Research Conference (DRC), Notre Dame, IN, Jun. 23-26, 2013.
E. J. Olson, D. A. Deen, M. A. Ebrish, A. Basu, Y. C. Kudva, P. Mukherjee, and S. J. Koester, “Wireless graphene-based quantum capacitance sensors for continuous glucose monitoring,” TechConnect World, Washington, DC, May 11-16, 2013.
J. Michel, S. J. Koester, J. Liu, X. Wang, M. W. Geis, S. J. Spector, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, and N.-N. Feng, “Photodetectors,” Handbook of Silicon Photonics (Series in Optics and Optoelectronics), L. Vivien and L. Pavesi, Eds., CRC Press, 2013.
S. J. Koester, T.-J. King Liu, J.-M. Hartmann, R. Loo, Y.-C. Yeo, and M. S. Carroll, “Selected papers from the 6^th International SiGe Technology and Device Meeting (ISTDM 2012),” Solid State Electron. 83, (2013).

2012

S. J. Koester, H. Li, and M. Li, “Switching energy limits of waveguide-coupled graphene-on-graphene optical modulators,” Opt. Express 20, 20330-20341 (2012).
H. Li, Y. Anugrah, S. J. Koester, and M. Li, “Optical absorption in graphene integrated on silicon waveguides,” Appl. Phys. Lett. 101, 111110 (2012).
S. J. Koester and M. Li, “High-speed waveguide-coupled graphene-on-graphene optical modulators,” Appl. Phys. Lett. 100, 171107 (2012).
M. A. Ebrish, H. Shao, and S. J. Koester, “Operation of multi-finger graphene quantum capacitance varactors using planarized local bottom gate electrodes,” Appl. Phys. Lett. 100, 143102 (2012).
M. A. Ebrish, and S. J. Koester, “Dielectric thickness dependence of quantum capacitance in graphene varactors with local metal back gates,” 70^th Device Research Conference (DRC), State College, PA, Jun. 18-20, 2012.

2011

S. J. Koester, “High quality factor graphene varactors for wireless sensing applications,” Appl. Phys. Lett. 99, 163105 (2011).
P. M. Solomon, I. Lauer, A. Majumdar, J. T. Teherani, M. Luisier, J. Cai, and S. J. Koester, “Effect of uniaxial strain on the drain current of a heterojunction tunneling field effect transistor,” IEEE Elect. Dev. Lett. 32, 464-466 (2011).
S. J. Koester, “Using the quantum capacitance in graphene to enable varactors for passive wireless sensing applications,” IEEE Sensors Conferences, Limerick, Ireland, Oct. 29-31, 2011.
G. Vaidhyanathan and S. J. Koester, “High-Q FDSOI varactors for wireless radiation sensing,” IEEE SOI Conference, Tempe, AZ, Oct. 3-6, 2011.
S. J. Koester, "Graphene quantum capacitance varactors for wireless sensing applications,” 69^th Device Research Conference (DRC), Santa Barbara, CA, Jun. 20-22, 2011.
C. Kshrisagar and S. J. Koester, “InAs/SiGe on Si nanowire tunneling field effect transistors,” 69^th Device Research Conference (DRC), Santa Barbara, CA, Jun. 20-22, 2011.
S. J. Koester, “Performance capabilities of Si and III-V TFETs,” 2011 CMOS Emerging Technologies Conference, Whistler, BC, Canada, Jun. 15-17, 2011 (invited).
J.-B. Yau, M. S. Gordon, K. P. Rodbell, S. J. Koester, P. W. DeHaven, D.-G. Park, and W. E. Haensch, “FDSOI radiation dosimeters,” 2011 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 25-27, 2011.
S. J. Koester, “Are Si/SiGe tunneling transistors a good idea?” Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2011), Savannah, GA, Feb. 20-23, 2011 (invited).
F. Liu, R. R. Yu, A. M. Young, L. Shi, K. A. Jenkins, X. Gu, N. R. Klymko, S. Purushothaman, S. J. Koester and W. Haensch, “A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding,” 3D Integration for VLSI Systems, C. S. Tan, K.-N. Chen and S. J. Koester, Eds., Pan Stanford, Singapore, 2011.
C. S. Tan, K.-N. Chen, and S. J. Koester, editors, “3D Integration for VLSI Systems,” Pan Stanford, ISBN 978-981-4303-81-1, 2011.

2010

S. O. Koswatta, S. J. Koester, and W. Haensch, “On the possibility of obtaining MOSFET-like performance and sub-60-mV/dec swing in 1-D broken-gap tunnel transistors,” IEEE Trans. Elect. Dev. 57, 3222-3230 (2010).
A. Majumdar, C. Ouyang, S. J. Koester, and W. Haensch, “Effects of substrate orientation and channel stress on short-channel thin SOI MOSFETs,” IEEE Trans. Elect. Dev. 57, 2067-2072 (2010).
Q. Zhang, Y. Q. Lu, H. G. Xing, S. J. Koester, and S. O. Koswatta, “Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons,” IEEE Elect. Dev. Lett. 31, 531-533 (2010).
T. Barwicz, L. Klein, S. J. Koester, and H. Hamann, “Silicon nanowire piezoresistance: impact of surface crystallographic orientation,” Appl. Phys. Lett. 97, 023110 (2010).
L. Chang, D. J. Frank, R. Montoye, S. J. Koester, B. Ji, P. Coteus, R. Dennard, and W. Haensch, “Practical strategies for power-efficient computing technologies,” Proc. IEEE 98, 215-236 (2010) (invited).
D. Harame, J. Boquet, M. Östling, Y. Yeo, G. Masini, M. Caymax, T. Krishnamohan, B. Tillack, S. Bedell, S. Miyazaki, A. Reznicek, and S. Koester, editors, “SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices,” Electrochemical Society Transactions, vol. 33, no. 6, Proceedings of the Electrochemical Society Meeting, Las Vegas, NV, Oct. 10-15, 2010.
A. M Young and S. J. Koester, “3D process technology considerations,” Three-Dimensional Integrated Circuit Design EDA, Design and Microarchitectures, Y. Xie, J. Cong, and S. Sapatnekar, Eds., Springer, New York, 2010.
S. J. Koester, I. Lauer, A. Majumdar, J. Cai, J. Sleight, S. Bedell, P. Solomon, S. Laux, L. Chang, S. Koswatta, W. Haensch, P. Tomasini, and S. Thomas, “Are Si/SiGe tunneling field-effect transistors a good idea?” Proc. of the Electrochemical Society Meeting, Las Vegas, NV, Oct. 10-15, 2010 (invited).
F. Liu, X. Gu, K. A. Jenkins, E. Cartier, Y. Liu, P. Song, and S. J. Koester, “Electrical characterization of 3D through-silicon-vias,” 60^th Electronic Components and Technology Conference (ECTC), Las Vegas, NV, Jun. 1-4, 2010.
Y. Lu, A. Seabaugh, P. Fay, S. J. Koester, S. E. Laux, W. Haensch, and S. O. Koswatta, “Geometry dependent tunnel FET performance - dilemma of electrostatics vs. quantum confinement,” 68^th Device Research Conference (DRC), Notre Dame, IN, Jun. 21-23, 2010.
Q. Zhang, Y. Lu, G. H. Xing, C. A. Richter, S. J. Koester, and S. O. Koswatta, “Graphene nanoribbon Schottky-barrier FETs for end-of-the-roadmap CMOS: challenges and opportunities,” 68^th Device Research Conference (DRC), Notre Dame, IN, Jun. 21-23, 2010.